| PART |
Description |
Maker |
| 2SK1739A |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER
|
Toshiba Semiconductor
|
| BLF404 |
UHF power MOS transistor
|
Philips
|
| BLF544 |
UHF power MOS transistor
|
Philips Semiconductors
|
| NE5511279A-T1A-A NE5511279A NE5511279A-T1-A |
7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
CEL[California Eastern Labs]
|
| NE5511279A-T1A-A NE5511279A-T1-A |
7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
California Eastern Laboratories
|
| 2SK2596BXTL-E 2SK259607 |
Silicon N-Channel MOS FET UHF Power Amplifier
|
Renesas Electronics Corporation
|
| 2SK2595 |
Silicon N-Channel MOS FET UHF Power Amplifier
|
Renesas Electronics Corporation
|
| 2SK3391JXTL-E 2SK339107 |
Silicon N-Channel MOS FET UHF Power Amplifier
|
Renesas Electronics Corporation
|
| BLF544 |
Protected; Fully Encapsulated; Efficiency to 80%; Custom versions available
UHF power MOS transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BLF2022-70 |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
UHF power LDMOS transistor
|
Philips Semiconductors
NXP Semiconductors
|
